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3 edition of Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport found in the catalog.

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

final report, contract number: NAS8-39718

  • 213 Want to read
  • 23 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English

    Subjects:
  • Crystal growth.,
  • Zinc selenides.,
  • Semiconductors (Materials),
  • Technologies

  • Edition Notes

    StatementChing-Hua Su.
    Series[NASA contractor report] -- 206116., NASA contractor report -- NASA CR-206116.
    ContributionsUnited States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL15491162M

    Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials Peter Capper Some crystals have been available for over 50 years, while others are newly applicable to such industries as medical imaging, infrared imaging, telecommunications and information technology, producing profits in the millions if not the billions of dollars. 21 hours ago  Ternary semiconductor 3. AlxIn1-xP Al 14 Nov Ternary semiconductors provide a natural way of tuning the desired band The optical and thermal properties of semiconductor materials are Thermal transport in bulk ternary III-V arsenide (III-As) semiconductor alloys was investigated using equilibrium molecular dynamics with optimized .

    Capturing the essence of current trends, markets, design tools and technologies in this key field, the internationally acclaimed expert editors have put together a handy reference tailor-made for readers facing the threshold challenges between research and industrial ing a look at general aspects, the book goes on to discuss simulation of industrial growth processes. Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, .

    Full text of "NASA Technical Reports Server (NTRS) Microgravity Materials Science Conference" See other formats. This book brings together two sets of related articles describing advances made in crystal growth science and technology since World War II. One set is from the proceedings of a Symposium held in August to celebrate 50 years of progress in the field of crystal growth.


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Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport Download PDF EPUB FB2

CRYSTAL GROWTH OF ZNSE AND RELATED TERNARY COMPOUND SEMICONDUCTORS BY VAPOR TRANSPORT Ching-Hua Su1*, R. Brebrick2, A. Burger3, M. Dudley4, N. Ramachandran5 NASA, Marshall Space Flight Center1, Marquette University2, Fisk University3, State University of New York at Stony Brook4, University Space Research.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport in Low Gravity Ching-Hua Su NASA/Marshall Space Flight Center Co. I.: N. Ramachandran, ESSSA/MSFC PS: Frank Zimmerman, MSFC ISS: MSRR Science 29th American Society for Gravitational and Space Research and 5th International Symposium for Physical Sciences in File Size: 5MB.

Get this from a library. Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport: contract number NAS final report.

[Ching-Hua Su; Universities Space Research Association.; United States. National Aeronautics and Space Administration.]. Get this from a library. Preliminary definition phase, crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport: final report submitted to the National Aeronautics and Space Administration.

[United States. National Aeronautics and Space Administration.;]. The free exciton emission, F x, is an intrinsic property of the intensity ratio of a specific emission to that of the free exciton emission has been adopted by the Si industry and the PVT-grown ZnSe crystals as a measurement of the defect concentration associated with that emission.

The integrated area ratio of I 2 to F x, A(I 2)/A(F x), was for the starting Cited by: Journal of Crystal Growth 96 () North-Holland. Amsterdam THE GROWTH OF ZnSe SINGLE CRYSTALS BY PHYSICAL VAPOR TRANSPORT Hai-Yuin CHENG and Elmer E. ANDERSON Department of Physics, University of Alabama in Huntsville, Huntsville, AlabamaUSA Received 14 November ; manuscript received in final form 20 February Zinc selenide Cited by: Crystal Growth of Ternary Compound Semiconductors (GTS) Crystallization of Cadmium-Telluride and Related Compounds NASA Objectives and Contributions: ♦ In crystal growth there is a need to understand the relation between processes in the fluid phase, both liquid and vapor, such as buoyancy driven convection, the incorporation of impurities, and.

A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the full-text. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of.

The single crystal ZnSe:I sample was grown by the chemical vapor transport (CVT) method using iodine as the transporting agent. The iodine incorporates itself effectively as a donor in the lattice. The sample shows a 〈〉 optical quality surface and has an absorption edge at eV due to a deep impurity band nearly eV below the conduction by: 5.

Vapor growth has some applications, particularly in high melting point materials and in II–VI compounds such as ZnSe and ZnS (Fig. a,b). High-temperature vapor transport, or sublimation, of SiC has progressed recently to producing 1–2 in by: 2.

Results of rigorous investigation in the area of bulk crystal growth of ternary and quaternary compounds over the past few decades have indicated the unfeasi-Engineering Phase Formation Thermo-Chemistry for Crystal Growth of Homogeneous Ternary and Quaternary III-V Compound Semiconductors from Melts P.S.

DUTTA1,3 and T.R. MILLER2. P.S. Dutta, T.R. Miller: Engineering phase formation thermo-chemistry for crystal growth of homogeneous ternary and quaternary III–V compound semiconductors from melts, J. Electron. Mater. 29, – () ADS CrossRef Google ScholarCited by: 5.

Crystallization from the vapor phase has an advantage over a melt growth, particularly for II-VI compounds as they have high melting temperature which can make the melt growth process difficult to be handled.

Physical vapor transport acts as a purification process because of difference in vapor pressure of native elements and impurities [12, 13]. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport. ZnSe, ZnS x Se 1-x; ZnSe 1-x Te x; One, however, involves semiconductors and crystal growth by vapor phase, which is a process related to some potential ceramic studies, and one is related to metallic glasses.

Future Materials Science Research on the. Indium nitride (InN) nanowire synthesis using indium (In) vapor transport in a dissociated ammonia environment (reactive vapor transport) is studied in detail to understand the nucleation and growth mechanisms involved with the so-called "self-catalysis" schemes.

The results show that the nucleation of InN crystal occurs first on the by: SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared.

In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth.

The inserted epitaxial layer was Cited by: 1. Regularly-shaped high-quality Bi 2 Se 3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi 2 Se 3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio Cited by: 7.

A chemical vapor transport (CVT) method was implemented to grow bulk ZnO crystals. X-ray diffraction (XRD), field emission scanning electron microscopy (SEM), and optical microscope (OM) studies were carried out to characterize the surface properties of the grown crystal. The XRD result indicated the exposed solid-vapor interface of the as-grown crystal was composed Cited by: 1.

A physical vapor transport (PVT) system has been designed and fabricated for growing SiC single crystals. Novel multisegmented graphite insulation has been used for improved heat containment in the hotzone. Numerical modeling was applied to obtain the temperature field inside the hotzone, which also helped in predicting various growth parameters.

Single crystals of 6H SiC Cited by: 7. Two chemical vapor transport methods with Zn(NH4)3Cl5 transport agent were developed to grow ZnSe bulk single crystals. Two kinds of Zn-rich ZnSe single crystals, conical crystal and flake crystal,were grown directly from untreated ZnSe polycrystals and two elements, respectively.

The structure characters, purity and etch pit density were studied by rotating Author: Huan Yong Li, Ke Wei Xu, Wan Qi Jie.nucleation and growth mechanism responsible for 1D crystal growth in these reactive vapor transport schemes.

InN nanowire synthesis is used here as a case study because of the interest in III-nitrides for various optoelectronics and high-temperature electronics applications.

In addition, InN has been the subject of renewed interest because of its.Impact of ISS Changes on Physical Sciences Research INTRODUCTION The physical sciences research sponsored by NASA’s Office of Biological and Physical Research (OBPR) has typically come under four disciplines—materials science, combustion science, fluids science, and fundamental physics—although some overlap occurs between these disciplines.